Infineon IPC50N04S5L5R5ATMA1: A High-Performance OptiMOS 5 Power MOSFET

In the realm of power electronics, efficiency, thermal performance, and reliability are paramount. The Infineon IPC50N04S5L5R5ATMA1 stands out as a premier solution, embodying the advanced OptiMOS™ 5 technology to meet the rigorous demands of modern applications. This 40V N-channel power MOSFET is engineered to deliver exceptional efficiency and power density, making it an ideal choice for a wide array of uses, from automotive systems and motor control to switched-mode power supplies (SMPS) and load switching.

A key highlight of this MOSFET is its extremely low on-state resistance (RDS(on)) of just 0.5 mΩ (max). This minimal resistance is crucial for reducing conduction losses, which directly translates to higher efficiency and less heat generation. The device can handle a continuous drain current (ID) of up to 500 A, showcasing its capability to manage high power levels without compromising performance. This robust current handling is vital for applications requiring high power in a compact form factor.

The OptiMOS 5 technology platform provides a significant leap forward from previous generations. It offers an optimized trade-off between RDS(on) and gate charge (Qg), which is essential for achieving high switching speeds and low switching losses. This makes the IPC50N04S5L5R5ATMA1 particularly effective in high-frequency circuits, enabling designers to create smaller, lighter, and more efficient power systems.

Furthermore, the device features enhanced avalanche ruggedness and is housed in a robust SuperSO8 package. This package offers excellent thermal characteristics, allowing for effective heat dissipation and improved reliability under stressful operating conditions. The combination of electrical superiority and mechanical robustness ensures long-term durability, which is critical for automotive and industrial environments where components are subjected to extreme temperatures and voltage spikes.

ICGOOFind: The Infineon IPC50N04S5L5R5ATMA1 is a top-tier power MOSFET that sets a high standard for performance and efficiency. Its ultra-low RDS(on), high current capability, and superior switching characteristics make it an indispensable component for next-generation power design, enabling significant advancements in energy savings and system miniaturization.

Keywords: OptiMOS 5, Low RDS(on), High Efficiency, Power Density, SuperSO8 Package.