Infineon IPA80R750P7XKSA1 750V N-Channel Power MOSFET for High-Efficiency Switching Applications
The demand for high-efficiency power conversion systems continues to grow across industries such as renewable energy, industrial motor drives, and electric vehicle charging infrastructure. Addressing this need, Infineon Technologies introduces the IPA80R750P7XKSA1, a robust 750V N-channel power MOSFET engineered to deliver exceptional switching performance and reliability in high-power applications.
Built on Infineon’s advanced CoolMOS™ P7 superjunction technology, this MOSFET sets a new benchmark for efficiency and power density. With a maximum drain-source voltage rating of 750V, the device is ideally suited for use in power supplies, inverters, and PFC (Power Factor Correction) circuits operating under demanding conditions. Its low on-state resistance (RDS(on)) of just 80mΩ minimizes conduction losses, while the optimized gate charge (Qg) ensures reduced switching losses, leading to higher overall system efficiency.
The IPA80R750P7XKSA1 also features enhanced avalanche ruggedness and improved body diode performance, making it highly durable in environments with high voltage spikes or inductive loads. The MOSFET’s low thermal resistance and high switching frequency capability allow designers to create more compact and lighter power systems without compromising performance.
Additionally, the device complies with international industry standards, offering high reliability and longevity. Its TO-220 package ensures easy mounting and efficient heat dissipation, further supporting its use in high-power-density designs.
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The Infineon IPA80R750P7XKSA1 stands out as a top-tier solution for modern high-voltage and high-efficiency power switching applications, combining low losses, thermal robustness, and reliability in a single package.
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Keywords:
Power MOSFET, High-Efficiency Switching, CoolMOS™ P7, 750V Rating, Low RDS(on)
