Infineon IPP180N10N3G: High-Performance N-Channel Power MOSFET for Efficient Switching Applications
The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. At the heart of many advanced power conversion systems, from server SMPS and telecom infrastructure to motor drives and renewable energy applications, lies the power MOSFET. The Infineon IPP180N10N3G stands out as a premier N-Channel MOSFET engineered specifically to meet these rigorous challenges, offering a blend of ultra-low on-state resistance and exceptional switching performance.
This device is built upon Infineon's advanced OptiMOS 3 technology platform, a hallmark of quality and performance in the power semiconductor industry. A key metric for any power MOSFET is its resistance when fully turned on (RDS(on)), as this directly translates into conduction losses. The IPP180N10N3G boasts an impressively low maximum RDS(on) of just 1.8 mΩ at 10 V gate drive. This ultra-low resistance ensures minimal voltage drop and power dissipation during conduction, leading to significantly higher efficiency and reduced need for heat sinking, which in turn allows for more compact and cost-effective system designs.
Beyond static performance, dynamic characteristics are crucial for high-frequency switching applications. The IPP180N10N3G exhibits excellent figures of merit, with low gate charge (Qg) and low effective output capacitance (Coss(eff)). These parameters contribute to reduced switching losses, enabling operation at higher frequencies. Faster switching speeds allow designers to shrink the size of passive components like inductors and capacitors, pushing the boundaries of power density. Furthermore, the device features a high maximum drain current rating (ID) of 400 A, underscoring its capability to handle very high power levels with robustness.
The component is offered in a TO-220 FullPAK package, which is fully isolated. This isolation simplifies the mechanical assembly process by eliminating the need for insulating washers and bushes, improving reliability and reducing overall system bill-of-materials costs. The robust packaging ensures optimal thermal performance, providing a low thermal resistance path from the silicon junction to the heatsink.
ICGOOODFIND: The Infineon IPP180N10N3G is a top-tier power MOSFET that delivers an optimal balance of ultra-low conduction loss, fast switching capability, and high current handling. Its design is pivotal for engineers aiming to maximize efficiency and power density in demanding switching power applications, making it an excellent choice for next-generation power supplies, motor control, and energy conversion systems.
Keywords: OptiMOS 3, Ultra-low RDS(on), High Switching Speed, High Current Capability, TO-220 FullPAK
