Infineon IPB100N04S4: High-Performance 100V OptiMOS Power MOSFET
In the realm of power electronics, achieving high efficiency and robust performance in a compact form factor is a constant challenge. The Infineon IPB100N04S4 addresses this challenge head-on, representing a pinnacle of design within the 100V OptiMOS power MOSFET family. This device is engineered to deliver exceptional switching performance and low power loss, making it an ideal solution for a wide array of demanding applications.
A key strength of the IPB100N04S4 lies in its extremely low typical on-state resistance (R DS(on)) of just 1.0 mΩ. This remarkably low value is critical for minimizing conduction losses, which directly translates to higher efficiency and reduced heat generation. Designers can leverage this to create cooler-running, more reliable systems or to push for higher power density without compromising thermal performance.
Furthermore, this MOSFET is optimized for fast switching capabilities. The low gate charge (Q G ) and figure of merit (FOM) ensure swift turn-on and turn-off transitions. This is paramount in high-frequency switch-mode power supplies (SMPS), DC-DC converters, and motor control circuits, where switching losses often become a dominant factor in overall system efficiency. The device enables designers to increase switching frequencies, allowing for the use of smaller passive components like inductors and capacitors.
Housed in the space-efficient SuperSO8 package, the IPB100N04S4 offers an excellent balance between performance and board space utilization. This package technology also provides superior thermal characteristics, ensuring that heat is effectively dissipated from the silicon die. The part is an excellent fit for modern automotive systems, such as electric power steering (EPS), brake systems, and high-performance computing (HPC) and server power supplies, where reliability under harsh conditions is non-negotiable.
The device also boasts a 100% avalanche tested ruggedness, guaranteeing its ability to handle unexpected voltage spikes and stressful operating conditions. This intrinsic robustness enhances the long-term reliability of the end application, providing designers with greater confidence in their power stage design.
In summary, the Infineon IPB100N04S4 is a top-tier 100V power MOSFET that sets a high standard for efficiency, power density, and reliability. Its combination of ultra-low R DS(on), fast switching speed, and robust packaging makes it a superior choice for advancing the performance of modern power conversion systems.
Keywords: Low RDS(on), High Switching Speed, Power Efficiency, SuperSO8 Package, Automotive Grade
