Infineon BSC042N03S G Power MOSFET: Datasheet, Application Circuit, and Pinout Configuration
The Infineon BSC042N03S G is a highly efficient N-channel power MOSFET, engineered using Infineon's advanced OptiMOS™ technology. This device is specifically designed for high-performance switching applications, offering an exceptional balance of low on-state resistance and high switching speed. It is a cornerstone component in modern power management systems, prized for its reliability and efficiency.
Datasheet Overview
The datasheet for the BSC042N03S G provides a comprehensive set of electrical and mechanical specifications. Key parameters include a drain-source voltage (VDS) of 30 V, a continuous drain current (ID) of 70 A at 25°C, and an ultra-low maximum drain-source on-state resistance (RDS(on)) of just 4.2 mΩ at 10 V VGS. This low RDS(on) is critical for minimizing conduction losses, which directly translates to higher efficiency and reduced heat generation in applications. The device is also characterized by its high avalanche ruggedness and a low gate charge (Qg), enabling very fast switching transitions.
Pinout Configuration
The MOSFET is offered in the space-saving, thermally enhanced PG-TSDSON-8 (SuperSO8) package. This package is designed for superior power dissipation. The pinout configuration is as follows:
Pins 1, 5, 6, 7, 8: These are all connected internally to the Drain (D) terminal. This multi-pin design significantly reduces the package's parasitic inductance and improves thermal performance by providing a larger contact area to the PCB.
Pin 2: This is the Gate (G) terminal. It is the control pin used to switch the MOSFET on and off.
Pins 3, 4: These are both connected internally to the Source (S) terminal.
It is crucial to consult the datasheet for the exact PCB layout footprint to ensure optimal electrical and thermal performance.
Application Circuit
A primary application for the BSC042N03S G is in synchronous rectification circuits within switch-mode power supplies (SMPS) and DC-DC converters, particularly in low-voltage, high-current scenarios like voltage regulator modules (VRMs) for servers and computing equipment.
A simplified synchronous buck converter circuit utilizes two MOSFETs:
1. Control MOSFET (High-Side): This switch controls the power delivery to the output.
2. Synchronous MOSFET (Low-Side): The BSC042N03S G is ideally suited for this role. Its ultra-low RDS(on) is paramount here, as it conducts current for a significant portion of the switching cycle. Minimizing its resistance directly reduces power loss during this conduction phase.
The gate of the BSC042N03S is driven by a dedicated MOSFET driver IC, which provides the necessary voltage (typically 5-10 V) and current to rapidly charge and discharge the gate capacitance, ensuring clean and efficient switching. Proper gate driving is essential to avoid shoot-through and to minimize switching losses.
ICGOODFIND Summary
ICGOODFIND: The Infineon BSC042N03S G stands out as a top-tier solution for demanding power conversion tasks. Its exceptional combination of very low RDS(on), high current handling, and a thermally efficient package makes it an excellent choice for designers aiming to maximize efficiency and power density in applications like server power supplies, high-current DC-DC converters, and motor control systems.
Keywords: Power MOSFET, Low RDS(on), Synchronous Rectification, DC-DC Converter, OptiMOS™
