Infineon IPN50R950CEATMA1: 950V CoolMOS™ Power Transistor for High-Efficiency Applications

The relentless pursuit of higher efficiency and power density in modern electronics drives continuous innovation in power semiconductor technology. At the forefront of this evolution is Infineon's IPN50R950CEATMA1, a 950V superjunction MOSFET from the revolutionary CoolMOS™ CE family. This transistor is engineered to set new benchmarks in performance for demanding high-voltage applications.

A key feature of the IPN50R950CEATMA1 is its exceptionally high blocking voltage of 950V. This rating provides a significant safety margin, making it an ideal choice for systems operating from unstable or harsh AC line voltages, such as those found in industrial settings or certain geographies. It ensures robust and reliable operation in power supplies, solar inverters, motor drives, and lighting systems.

The cornerstone of the CoolMOS™ technology is its superjunction (SJ) structure. This design breakthrough drastically reduces the on-state resistance (RDS(on)) for a given silicon area. The IPN50R950CEATMA1 boasts a remarkably low maximum RDS(on) of just 50 mΩ. This directly translates to minimized conduction losses, allowing for more power to be delivered to the load with less energy wasted as heat. This efficiency gain is crucial for reducing energy consumption and simplifying thermal management designs.

Beyond low conduction losses, this transistor also excels in dynamic performance. It features superior switching characteristics, including low gate charge (QG) and low effective output capacitance (COSS eff). These parameters are vital for high-frequency operation, enabling designers to shrink the size of magnetic components like transformers and inductors. The result is a move towards more compact, lighter, and higher power-density end products.

Furthermore, the device offers enhanced robustness and reliability. Its integrated fast body diode provides excellent reverse recovery characteristics, which is critical for hard-switching topologies like power factor correction (PFC) circuits. This contributes to reduced switching losses and improved system-level electromagnetic interference (EMI) performance.

ICGOOODFIND: The Infineon IPN50R950CEATMA1 represents a pinnacle of high-voltage MOSFET design, combining an ultra-high 950V rating with extremely low conduction losses and fast switching speed. It is a cornerstone component for engineers striving to achieve new levels of efficiency, power density, and reliability in their high-performance applications.

Keywords: CoolMOS™, High Voltage, Superjunction MOSFET, Power Efficiency, Switching Performance.