Infineon IPB160N04S3-H2: High-Performance OptiMOS 3 Power MOSFET for Efficient Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronics demands superior semiconductor components. At the forefront of this innovation is Infineon Technologies' IPB160N04S3-H2, a benchmark N-channel power MOSFET that exemplifies the advanced performance of the OptiMOS 3 technology platform. This device is engineered to deliver exceptional efficiency and reliability in a compact package, making it an ideal solution for a wide array of power conversion applications.

A key strength of the IPB160N04S3-H2 lies in its outstanding electrical characteristics. With a very low maximum on-state resistance (RDS(on)) of just 1.6 mΩ at 10 V, this MOSFET minimizes conduction losses significantly. This is paramount in applications like synchronous rectification in switch-mode power supplies (SMPS) and DC-DC converters, where even marginal losses can impact overall system efficiency and thermal management. The low RDS(on) ensures that more power is delivered to the load and less is wasted as heat.

Furthermore, the device boasts an excellent gate charge (Qg) and figure-of-merit (FOM), which directly translates to reduced switching losses. This allows for operation at higher switching frequencies, enabling designers to use smaller passive components like inductors and capacitors. The result is a substantial increase in power density, allowing for more compact and lighter end-products without compromising performance.

Housed in the space-saving SuperSO8 (LFPAK) package, the IPB160N04S3-H2 offers a superior thermal resistance compared to standard SO-8 packages. This robust packaging technology enhances power dissipation capabilities, ensuring reliable operation even under demanding conditions. Its high current handling capacity of up to 160 A makes it exceptionally suited for high-load scenarios, including motor control, battery management systems (BMS), and automotive power systems.

The combination of low switching and conduction losses provided by the OptiMOS 3 technology makes this MOSFET a cornerstone for building highly efficient and reliable power electronics. It is a critical component for engineers aiming to meet stringent energy efficiency standards like 80 PLUS Titanium in server PSUs and to extend battery life in portable devices.

ICGOOODFIND: The Infineon IPB160N04S3-H2 is a top-tier power MOSFET that sets a high standard for efficiency and thermal performance. Its ultra-low RDS(on), superior switching characteristics, and advanced package make it an indispensable component for next-generation power conversion systems, from computing and telecom to automotive applications.

Keywords:

1. Power MOSFET

2. Low RDS(on)

3. Synchronous Rectification

4. DC-DC Converters

5. SuperSO8 Package