Infineon IPB107N20N3GATMA1: High-Performance OptiMOS 5 Power MOSFET for Automotive and Industrial Applications

The relentless drive towards higher efficiency, greater power density, and enhanced reliability in power electronics is at the core of modern automotive and industrial design. Addressing these demanding requirements, Infineon Technologies introduces the IPB107N20N3GATMA1, a benchmark power MOSFET leveraging the advanced OptiMOS™ 5 200 V technology. This device stands as a superior solution for a wide range of high-switching-frequency applications, from electric power steering and braking systems to industrial motor drives and solar inverters.

A key differentiator of the IPB107N20N3GATMA1 is its exceptionally low figure-of-merit (R DS(on) x Q G). With a maximum on-state resistance of just 1.07 mΩ and optimized gate charge, this MOSFET achieves minimal conduction and switching losses. This translates directly into higher overall system efficiency, reduced heat generation, and the possibility for designers to use smaller heatsinks or increase power output within the same form factor. The ultra-low R DS(on) ensures that power is delivered with minimal waste, which is critical for battery-operated systems and energy-conscious industrial equipment.

Beyond raw performance, this component is engineered for the rigorous demands of the automotive sector. It is AEC-Q101 qualified, guaranteeing that it meets the stringent quality and reliability standards required for use in critical vehicle applications. Its robust design ensures outstanding performance under harsh operating conditions, including wide temperature variations and high vibrational stress. The SuperSO8 package (PG-TDSON-8) offers a compact footprint while providing superior thermal performance and power cycling capability compared to standard packages, thanks to its exposed cooling pad.

For industrial applications, the benefits are equally compelling. The combination of high switching speed and robustness makes it an ideal choice for high-frequency DC-DC converters and motor control units. Designers can achieve higher power density by operating at elevated frequencies, allowing for the use of smaller passive components like inductors and capacitors. This leads to more compact, lighter, and ultimately more cost-effective end products without compromising on performance or reliability.

ICGOODFIND: The Infineon IPB107N20N3GATMA1 OptiMOS 5 200 V MOSFET is a top-tier component that sets a new standard for power switching. Its blend of ultra-low losses, automotive-grade robustness, and excellent thermal performance in a compact package makes it an indispensable choice for engineers designing next-generation automotive systems and high-efficiency industrial platforms.

Keywords: OptiMOS 5, Low R DS(on), AEC-Q101 Qualified, High Power Density, SuperSO8 Package.